| , u na. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 silicon npn power transistor MJ12004 description ? collector-emitter voltage- vcex= 1500v ? safe operation area ? switching time with inductive load applications ? designed for use in large screen color deflection circuits. absolute maximum ratings(ta=25c) symbol vcex vceo(sus) vebo ic ib ie pc tj tstg parameter collector-emitter voltage collector-emitter voltage emitter-base voltage collector current-continuous base current-continuous emitter current-continuous collector power dissipation@tc=25c junction temperature storage temperature value 1500 750 5 5 4 9 100 150 -65-150 unit v v v a a a w c "c thermal characteristics symbol rth j-c parameter thermal resistance, junction to case max 1.25 unit c/w 1 pin 1.base |x^ 2. emitter k. 3. collect or (case) 1 to-3 package 2 f t-e 1 1 g t c -?ju- d 2 pl v, rjus r 1 \ /^k^\ sl 4l d \1 ^ -/ / 1 ? c j i in ii dm mm iux. a 3900 b 2530 c 780 0 090 e 1 40 26,67 8,30 1.10 1.60 q 1092 h 546 k 11.40 l 1675 n 19.40 q 4.00 u 30.00 v 4.30 1350 1706 1962 4.20 3020 4,50 i 13h t t ; b 1 nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
silicon npn power transistor MJ12004 electrical characteristics tc=25'c unless otherwise specified symbol vceo(sus) vce(sat)-1 vce(sat)-2 vae(sat)-1 vbe(sat)-2 ices iebo hfe fr cob tf parameter collector-emitter sustaining voltage collector-emitter saturation voltage collector-emitter saturation voltage base-emitter saturation voltage base-emitter saturation voltage collector cutoff current emitter cutoff current dc current gain current-gain?bandwidth product output capacitance fall time conditions lc=50ma ; !b=o lc=4.5a; ib=1.8a ic=3.5a; ib= 1 .5a |c=4.5a;ib=1.8a lc=3.5a; ib=1-5a vce=1500v;vbe=0 veb= 5v; lc=0 lc= 0.5a ; vce= 5v lc= 0.1 a; vce= 5v; ftest=1.0mhz le=0;vob=10v;f,est=0.1mhz lc=4.5a, ib1=1.8a; le=8uh min 750 typ. 12 4 125 0.4 max 5.0 5.0 1.5 1.5 1.0 1.0 1.0 unit v v v v v ma ma mhz pf u s
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